High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

By Li Jyun-Yi   Chang Sheng-Po   Hsu Ming-Hung   Chang Shoou-Jinn  

Materials, Vol. 10, Iss. 2, 2017-02 ,pp. : 126-126

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A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO₂ Gate Insulator TFT with a High Concentration Precursor

By Cai Wei   Zhu Zhennan   Wei Jinglin   Fang Zhiqiang   Ning Honglong   Zheng Zeke   Zhou Shangxiong   Yao Rihui   Peng Junbiao   Lu Xubing  

Materials, Vol. 10, Iss. 8, 2017-08 ,pp. : 972-972

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Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors

By Ning Honglong   Chen Jianqiu   Fang Zhiqiang   Tao Ruiqiang   Cai Wei   Yao Rihui   Hu Shiben   Zhu Zhennan   Zhou Yicong   Yang Caigui   Peng Junbiao  

Materials, Vol. 10, Iss. 1, 2017-01 ,pp. : 51-51

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Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits

By Martins Jorge   Bahubalindruni Pydi   Rovisco Ana   Kiazadeh Asal   Martins Rodrigo   Fortunato Elvira   Barquinha Pedro  

Materials, Vol. 10, Iss. 6, 2017-06 ,pp. : 680-680

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Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO₂ Thin-Film

By Ning Honglong   Liu Xianzhe   Zhang Hongke   Fang Zhiqiang   Cai Wei   Chen Jianqiu   Yao Rihui   Xu Miao   Wang Lei   Lan Linfeng   Peng Junbiao   Wang Xiaofeng   Zhang Zichen  

Materials, Vol. 10, Iss. 1, 2017-01 ,pp. : 24-24

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