Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer

Author: Song Jie   Han Jung  

Publisher: MDPI

E-ISSN: 1996-1944|10|3|252-252

ISSN: 1996-1944

Source: Materials, Vol.10, Iss.3, 2017-03, pp. : 252-252

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Abstract