Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology

Author： Yang Shao-Ming  

Publisher： Edp Sciences

E-ISSN： 2261-236x|201|issue|02004-02004

ISSN： 2261-236x

Source： MATEC Web of conference, Vol.201, Iss.issue, 2018-09, pp. : 02004-02004

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