A novel LDMOS with a junction field plate and a partial N-buried layer

E-ISSN： 1741-4199|23|12|127303-127307

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.12, 2014-12, pp. : 127303-127307

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

A low specific on-resistance SOI LDMOS with a novel junction field plate

By Yin-Chun Luo Xiao-Rong Luo Gang-Yi Hu Yuan-Hang Fan Peng-Cheng Li Jie Wei Qiao Tan Bo Zhang

Chinese Physics B, Vol. 23, Iss. 7, 2014-07 ,pp. : 77306-77310

IOP Publishing

Access to resources Recommend Favorite

New CMOS compatible super-junction LDMOST with n-type buried layer

By Bao-Xing Duan Bo Zhang Zhao-Ji Li

Chinese Physics, Vol. 16, Iss. 12, 2007-12 ,pp. : 3754-3759

IOP Publishing

Access to resources Recommend Favorite

Partial-SOI high voltage laterally double-diffused MOS with a partially buried n⁺-layer

By Sheng-Dong Hu Xing-He Wu Zhi Zhu Jing-Jing Jin Yin-Hui Chen

Chinese Physics B, Vol. 23, Iss. 6, 2014-06 ,pp. : 67101-67105

IOP Publishing

Access to resources Recommend Favorite

A novel high performance TFS SJ IGBT with a buried oxide layer

By Jin-Ping Zhang Ze-Hong Li Bo Zhang Zhao-Ji Li

Chinese Physics B, Vol. 23, Iss. 8, 2014-08 ,pp. : 88504-88509

IOP Publishing

Access to resources Recommend Favorite

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

By Wei Wu Bo Zhang Xiao-Rong Luo Jian Fang Zhao-Ji Li

Chinese Physics B, Vol. 23, Iss. 3, 2014-03 ,pp. : 38503-38507

IOP Publishing

Access to resources Recommend Favorite