Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress

Publisher: IOP Publishing

E-ISSN: 1741-4199|23|11|117303-117308

ISSN: 1674-1056

Source: Chinese Physics B, Vol.23, Iss.11, 2014-11, pp. : 117303-117308

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content