Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

E-ISSN： 1741-4199|23|11|117304-117308

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.11, 2014-11, pp. : 117304-117308

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

By Xiao-Yi Lei Hong-Xia Liu Yue Zhang Xiao-Hua Ma Yue Hao

Chinese Physics B, Vol. 23, Iss. 5, 2014-05 ,pp. : 57305-57309

IOP Publishing

Access to resources Recommend Favorite

Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium

By Yu T Wu M W

Journal of Physics: Condensed Matter, Vol. 27, Iss. 25, 2015-06 ,pp. : 255001-255009

IOP Publishing

Access to resources Recommend Favorite

ANNEALING OF HOT-CARRIER-INDUCED MOSFET DEGRADATION

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-771-C4-774

Edp Sciences

Access to resources Recommend Favorite

The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs at cryogenic temperatures

Le Journal de Physique IV, Vol. 12, Iss. 3, 2002-05 ,pp. : 11-14

Edp Sciences

Access to resources Recommend Favorite

THE IMPACT OF DIFFERENT HOT-CARRIER-DEGRADATION COMPONENTS ON THE OPTIMIZATION OF SUBMICRON n-CHANNEL LDD TRANSISTORS

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-787-C4-790

Edp Sciences

Access to resources Recommend Favorite