In situ etching for control over axial and radial III-V nanowire growth rates using HBr

E-ISSN： 1361-6528|25|50|505601-505609

ISSN： 0957-4484

Source： Nanotechnology, Vol.25, Iss.50, 2014-12, pp. : 505601-505609

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Nanoscale opening fabrication on Si (111) surface from SiO₂ barrier for vertical growth of III-V nanowire arrays

By Shi Tuanwei Wang Xiaoye Wang Baojun Wang Wei Yang Xiaoguang Yang Wenyuan Chen Qing Xu Hongqi Xu Shengyong Yang Tao

Nanotechnology, Vol. 26, Iss. 26, 2015-07 ,pp. : 265302-265310

IOP Publishing

Access to resources Recommend Favorite

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

By Briand D. Sarret M. Le Bihan F. Bonnaud O. Pichon L.

Materials Science and Technology, Vol. 11, Iss. 11, 1995-11 ,pp. : 1207-1209

Maney Publishing

Access to resources Recommend Favorite

In situ fabrication and optoelectronic analysis of axial CdS/p-Si nanowire heterojunctions in a high-resolution transmission electron microscope

By Zhang Chao Xu Zhi Tian Wei Tang Dai-Ming Wang Xi Bando Yoshio Fukata Naoki Golberg Dmitri

Nanotechnology, Vol. 26, Iss. 15, 2015-04 ,pp. : 154001-154008

IOP Publishing

Access to resources Recommend Favorite

An in-house approach for fabrication of silicon nanowire arrays using electroless metal deposition and etching method

By Hazra Purnima Jit Satyabrata

International Journal of Surface Science and Engineering, Vol. 7, Iss. 3, 2013-09 ,pp. : 285-294

Inderscience Publishers

Access to resources Recommend Favorite

II–VI nanowire radial heterostructures

By Kahen K B Goldthorpe Irene A Holland M

Nanotechnology, Vol. 24, Iss. 45, 2013-11 ,pp. : 455603-455610

IOP Publishing

Access to resources Recommend Favorite