Electrical characteristics of a-SiGe:H thin-film transistors with Sb/Al binary alloy Schottky source/drain contact

By Lin C.-S.   Yeh R.-H.   Li I.-X.   Hong J.-W.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1787-1791

Elsevier

Access to resources Recommend Favorite

Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target

By Lee J.  

Journal of Electronic Materials, Vol. 40, Iss. 11, 2011-11 ,pp. : 2209-2213

Springer Publishing Company

Access to resources Recommend Favorite

An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications

By Huanqin Dang   Xiaoming Wu   Xiaowei Sun   Runqiu Zou   Ruochuan Zhang   Shougen Yin  

Journal of Semiconductors, Vol. 36, Iss. 10, 2015-10 ,pp. : 104003-104007

IOP Publishing

Access to resources Recommend Favorite

A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization

By Jeong Chan-Yong   Lee Daeun   Song Sang-Hun     Lee Jong-Ho   Kwon Hyuck-In  

Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. : 45023-45028

IOP Publishing

Access to resources Recommend Favorite

Body engineering structure for ZnO thin-film transistors: a Schottky-contact-merged ZnO TFT

By Kim Young Su   Kang Min Ho   Oh Jae Sub   Jeong Kang Suk   Kim Yu Mi   Yoo Dong Eun   Lee Hi Deok   Lee Ga Won  

Journal of Information Display, Vol. 14, Iss. 3, 2013-09 ,pp. : 89-91

Taylor & Francis Ltd

Access to resources Recommend Favorite