A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization

Author： Jeong Chan-Yong   Lee Daeun   Song Sang-Hun     Lee Jong-Ho   Kwon Hyuck-In  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.4, 2014-04, pp. : 45023-45028

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