Spectroellipsometric characterisation of thin epitaxial Si_1–xGe_x layers

By Líbezný M.   Caymax M.   Brablec A.   Kuběna J.   Holý V.   Poortmans J.   Nijs J.   Vanhellemont J.  

Materials Science and Technology, Vol. 11, Iss. 10, 1995-10 ,pp. : 1065-1070

Maney Publishing

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Properties of Si/Si_{1 − x}Ge_x quantum dots and wires grown by selective epitaxy

By Vescan L.   Dieker C.   Loo R.   Apetz R.   Hartmann A.   Wickenhäuser S.   Lüth H.  

Materials Science and Technology, Vol. 11, Iss. 4, 1995-04 ,pp. : 421-424

Maney Publishing

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Single phase Si1−xGex nanocrystals and the shifting of the E1 direct energy transition

By Ngo Ngoc Ha   Nguyen Truong Giang   Truong Thi Thanh Thuy   Nguyen Ngoc Trung   Nguyen Duc Dung   SaeedSaba   GregorkiewiczTom  

Nanotechnology, Vol. 26, Iss. 37, 2015-09 ,pp. : 375701-375705

IOP Publishing

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Irradiation induced lattice defects in Si_1−xGe_x devices and their effect on device performance

By Ohyama H.   Vanhellemont J.   Takami Y.   Hayama K.   Sunaga H.   Poortmans J.   Caymax M.   Clauws P.  

Materials Science and Technology, Vol. 11, Iss. 4, 1995-04 ,pp. : 429-435

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Effects of stress on interdiffusion in Si_1−xGe_x/Si superlattices

By Prokes S. M.  

Materials Science and Technology, Vol. 11, Iss. 4, 1995-04 ,pp. : 389-395

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