Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Author： Hua-Jun Shen Ya-Chao Tang Zhao-Yang Peng Xiao-Chuan Deng Yun Bai Yi-Yu Wang Cheng-Zhan Li Ke-An Liu Xin-Yu Liu

Publisher： IOP Publishing

E-ISSN： 1741-3540|32|12|127101-127104

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.12, 2015-12, pp. : 127101-127104

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