Investigation of trap states in Al2O3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors

Author: Peng Zhang   Sheng-Lei Zhao   Jun-Shuai Xue   Jie-Jie Zhu   Xiao-Hua Ma   Jin-Cheng Zhang   Yue Hao  

Publisher: IOP Publishing

E-ISSN: 1741-4199|24|12|127306-127309

ISSN: 1674-1056

Source: Chinese Physics B, Vol.24, Iss.12, 2015-12, pp. : 127306-127309

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