Author: Peng Zhang Sheng-Lei Zhao Jun-Shuai Xue Jie-Jie Zhu Xiao-Hua Ma Jin-Cheng Zhang Yue Hao
Publisher: IOP Publishing
E-ISSN: 1741-4199|24|12|127306-127309
ISSN: 1674-1056
Source: Chinese Physics B, Vol.24, Iss.12, 2015-12, pp. : 127306-127309
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
By Peng Zhang Sheng-Lei Zhao Jun-Shuai Xue Kai Zhang Xiao-Hua Ma Jin-Cheng Zhang Yue Hao
Chinese Physics Letters, Vol. 31, Iss. 3, 2014-03 ,pp. :
By Lachab M Sultana M Fareed Q Husna F Adivarahan V Khan A
Journal of Physics D: Applied Physics, Vol. 47, Iss. 13, 2014-04 ,pp. :
Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors
Chinese Physics B, Vol. 24, Iss. 11, 2015-11 ,pp. :
By Xue-Yang Liao Kai Zhang Chang Zeng Xue-Feng Zheng Yun-Fei En Ping Lai Yue Hao
Chinese Physics B, Vol. 23, Iss. 5, 2014-05 ,pp. :
By Zhi-Wei Bi Yue Hao Qian Feng Zhi-Yuan Gao Jin-Cheng Zhang Wei Mao Kai Zhang Xiao-Hua Ma Hong-Xia Liu Lin-An Yang Nan Mei Yong-Ming Chang
Chinese Physics Letters, Vol. 29, Iss. 2, 2012-02 ,pp. :