Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography

By Matsuhata Hirofumi   Yamaguchi Hirotaka   Yamashita Tamotsu   Tanaka Toshiaki   Chen Bin   Sekiguchi Takashi  

Philosophical Magazine, Vol. 94, Iss. 15, 2014-05 ,pp. : 1674-1685

Taylor & Francis Ltd

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Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 297-300

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Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers

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Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 209-213

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Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry

By Matsuhata Hirofumi  

Philosophical Magazine, Vol. 92, Iss. 36, 2012-12 ,pp. : 4599-4617

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Structural characterization of double stacking faults induced by cantilever bending in nitrogen-doped 4H-SiC

By Regula G.  

Philosophical Magazine Letters, Vol. 85, Iss. 5, 2005-05 ,pp. : 259-267

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