Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography

By Matsuhata Hirofumi   Yamaguchi Hirotaka   Yamashita Tamotsu   Tanaka Toshiaki   Chen Bin   Sekiguchi Takashi  

Philosophical Magazine, Vol. 94, Iss. 15, 2014-05 ,pp. : 1674-1685

Taylor & Francis Ltd

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Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 105-108

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Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry

By Matsuhata Hirofumi  

Philosophical Magazine, Vol. 92, Iss. 36, 2012-12 ,pp. : 4599-4617

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Direct observation of dislocations propagated from 4H-SiC substrate to epitaxial layer by X-ray topography

By Ohno T.   Yamaguchi H.   Kuroda S.   Kojima K.   Suzuki T.   Arai K.  

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 209-216

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Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers

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Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 209-213

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