Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes

E-ISSN： 1662-9752|2016|858|761-764

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 761-764

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p⁺-p^–-n⁺ 4H-SiC Drift Step Recovery Diodes

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 632-635

Trans Tech Publications

Access to resources Recommend Favorite

Effects of Neutron and Electron Irradiation on 4H-SiC Diodes

Materials Science Forum, Vol. 2016, Iss. 840, 2016-02 ,pp. : 281-286

Trans Tech Publications

Access to resources Recommend Favorite

Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 468-471

Trans Tech Publications

Access to resources Recommend Favorite

XPS characterization of tungsten-based contact layers on 4H-SiC

By Kakanakova-Georgieva A. Marinova T. Noblanc O. Arnodo C. Cassette S. Brylinski C.

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 180-183

Elsevier

Access to resources Recommend Favorite

Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes

By Sochacki M. Szmidt J.

Thin Solid Films, Vol. 446, Iss. 1, 2004-01 ,pp. : 106-110

Elsevier

Access to resources Recommend Favorite