Characterizations of Removal Rate and Temperature in the Inductively Coupled Plasma Etching of Silicon Carbide

Publisher: Trans Tech Publications

E-ISSN: 1662-9795|2016|679|85-90

ISSN: 1013-9826

Source: Key Engineering Materials, Vol.2016, Iss.679, 2016-03, pp. : 85-90

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Abstract