Journal de Physique III,volume 7,issue 7  (07-1997)

Period of time： 1997年7期

Publisher： Edp Sciences

Founded in： 1998

Total resources： 84

E-ISSN： 1286-4897|7|7

ISSN： 1155-4320

Subject： O4 Physics

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Journal de Physique III,volume 7,issue 7

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An ${\it Ab}~{\it Initio}$ Study of the 90° Partial Dislocation Core in Diamond

Journal de Physique III,volume 7,issue 7 , Vol. 7, Iss. 7, 1997-07 , pp. 1381-1387

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Deep-Level Transient-Spectroscopy for Localized States at Extended Defects in Semiconductors

Journal de Physique III,volume 7,issue 7 , Vol. 7, Iss. 7, 1997-07 , pp. 1389-1398

Edp Sciences

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Energy Levels Associated with Extended Defects in Plastically Deformed n-Type Silicon

Journal de Physique III,volume 7,issue 7 , Vol. 7, Iss. 7, 1997-07 , pp. 1399-1409

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Conductivity and Photoconductivity at Dislocations

Journal de Physique III,volume 7,issue 7 , Vol. 7, Iss. 7, 1997-07 , pp. 1411-1424

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Non-Destructive Techniques for Identification and Control of Processing Induced Extended Defects in Silicon and Correlation with Device Yield

Journal de Physique III,volume 7,issue 7 , Vol. 7, Iss. 7, 1997-07 , pp. 1425-1433

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Mechanical Properties and Dislocation Dynamics in III-V Compounds

Journal de Physique III,volume 7,issue 7 , Vol. 7, Iss. 7, 1997-07 , pp. 1435-1450

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High Resolution Electron Microscopic Studies of the Atomistic Glide Processes in Semiconductors

Journal de Physique III,volume 7,issue 7 , Vol. 7, Iss. 7, 1997-07 , pp. 1451-1467

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Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon

Journal de Physique III,volume 7,issue 7 , Vol. 7, Iss. 7, 1997-07 , pp. 1469-1486

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Passivation of Extended Defects in Silicon by Catalytically Dissociated Molecular Hydrogen

Journal de Physique III,volume 7,issue 7 , Vol. 7, Iss. 7, 1997-07 , pp. 1487-1493

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Interaction of Copper with Dislocations in GaAs

Journal de Physique III,volume 7,issue 7 , Vol. 7, Iss. 7, 1997-07 , pp. 1495-1503

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