Publisher: Edp Sciences
E-ISSN: 1286-4897|7|7|1435-1450
ISSN: 1155-4320
Source: Journal de Physique III, Vol.7, Iss.7, 1997-07, pp. : 1435-1450
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
POINT DEFECTS AND DISLOCATION CLIMB IN III-V COMPOUNDS SEMICONDUCTORS
Le Journal de Physique Colloques, Vol. 40, Iss. C6, 1979-06 ,pp. :
RECOMBINATION ENHANCED MOBILITY OF DISLOCATIONS IN III-V COMPOUNDS
Le Journal de Physique Colloques, Vol. 44, Iss. C4, 1983-09 ,pp. :
A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V COMPOUNDS
Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. :
VELOCITIES AND INTERNAL FRICTION OF DISLOCATIONS IN III-V COMPOUNDS
Le Journal de Physique Colloques, Vol. 40, Iss. C6, 1979-06 ,pp. :
THIN FILMS OF III-V COMPOUNDS AND THEIR APPLICATIONS
Le Journal de Physique Colloques, Vol. 43, Iss. C1, 1982-10 ,pp. :