The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs at cryogenic temperatures

Publisher： Edp Sciences

E-ISSN： 1764-7177|12|3|11-14

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.12, Iss.3, 2002-05, pp. : 11-14

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