Publisher: John Wiley & Sons Inc
E-ISSN: 1862-6319|215|1|pssa.201700743-pssa.201700743
ISSN: 1862-6300
Source: PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.215, Iss.1, 2018-01, pp. : n/a-n/a
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Previous Menu Next
Abstract
Related content
The growth kinetics of Si 1-x Ge x layers from SiH 4 and GeH 4
By Potapov A.V. Orlov L.K. Ivin S.V.
Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. :
Epitaxial growth of Si 1-x-y Ge x C y film on Si(100) in a SiH 4 -GeH 4 -CH 3 SiH 3 reaction
By Ichikawa A. Hirose Y. Ikeda T. Noda
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :