The growth kinetics of Si 1-x Ge x layers from SiH 4 and GeH 4

Author: Potapov A.V.   Orlov L.K.   Ivin S.V.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.336, Iss.1, 1998-12, pp. : 191-195

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract