Epitaxial growth of Si 1-x-y Ge x C y film on Si(100) in a SiH 4 -GeH 4 -CH 3 SiH 3 reaction

Author: Ichikawa A.   Hirose Y.   Ikeda T.   Noda  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.369, Iss.1, 2000-07, pp. : 167-170

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Abstract