The Influence of n‐AlGaN Inserted Layer on the Performance of Back‐Illuminated AlGaN‐Based p‐i‐n Ultraviolet Photodetectors

Publisher: John Wiley & Sons Inc

E-ISSN: 1862-6319|215|2|pssa.201700358-pssa.201700358

ISSN: 1862-6300

Source: PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.215, Iss.2, 2018-01, pp. : n/a-n/a

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Abstract