A High‐k Fluorinated P(VDF‐TrFE)‐g‐PMMA Gate Dielectric for High‐Performance Flexible Field‐Effect Transistors

E-ISSN： 1616-3028|28|4|adfm.201704780-adfm.201704780

ISSN： 1616-301x

Source： ADVANCED FUNCTIONAL MATERIALS, Vol.28, Iss.4, 2018-01, pp. : n/a-n/a

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