Related content

A Sharp Interface Model of Intermediate-Phase Growth Under the Influence of Electromigration

By Zhou Peng  

Journal of Electronic Materials, Vol. 40, Iss. 9, 2011-09 ,pp. : 1876-1883

Springer Publishing Company

Access to resources Recommend Favorite

A Diffuse Interface Model of Intermediate-Phase Growth Under the Influence of Electromigration

By Zhou Peng  

Journal of Electronic Materials, Vol. 40, Iss. 9, 2011-09 ,pp. : 1867-1875

Springer Publishing Company

Access to resources Recommend Favorite

A Model for Rapid Tin Whisker Growth on the Surface of ErSn 3 Phase

By Hao Hu  

Journal of Electronic Materials, Vol. 41, Iss. 2, 2012-02 ,pp. : 184-189

Springer Publishing Company

Access to resources Recommend Favorite

Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy

By Kim Joon-Hyung   Seong Tae-Yeon   Mason N.   Walker P.  

Journal of Electronic Materials, Vol. 27, Iss. 5, 1998-05 ,pp. : 466-471

Springer Publishing Company

Access to resources Recommend Favorite

Growth of GaBN ternary solutions by organometallic vapor phase epitaxy

By Polyakov A.   Shin M.   Skowronski M.   Greve D.   Wilson R.   Govorkov A.   Desrosiers R.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 237-242

Springer Publishing Company

Access to resources Recommend Favorite