Period of time: 2004年2期
Publisher: Elsevier
Founded in: 1983
Total resources: 4
ISSN: 0167-9317
Subject: TN Radio Electronics, Telecommunications Technology
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Microelectronic Engineering,volume 70,issue 2
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By Thomas O., Dallaporta H., Gas P. in (2003)
Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp.Towards implementation of a nickel silicide process for CMOS technologies
By Lavoie C., d'Heurle F.M., Detavernier C., Cabral C. in (2003)
Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp.Ni- and Co-based silicides for advanced CMOS applications
By Kittl J.A., Lauwers A., Chamirian O., Van Dal M., Akheyar A., De Potter M., Lindsay R., Maex K. in (2003)
Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp.First stages of silicidation in Ti/Si thin films
By Chenevier B., Chaix-Pluchery O., Gergaud P., Thomas O., Madar R., La Via F. in (2003)
Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp.Nickel-based contact metallization for SiGe MOSFETs: progress and challenges
Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp.By Zhao Q.T., Kluth P., Bay H., Mantl S. in (2003)
Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp.Time resolved study on Co/Ni/a-Si phase transition during isothermal annealing at 400 o C
By Alberti A., Bongiorno C., La Via F., Cafra B., Spinella C. in (2003)
Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp.By Bresolin C., Pesaturo M., Paruzzi P., Soncini V., Erbetta D., Bigi M. in (2003)
Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp.Thickness scaling issues of Ni silicide
By Chamirian O., Kittl J.A., Lauwers A., Richard O., van Dal M., Maex K. in (2003)
Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp.Transport properties of Mn-doped Ru 2 Si 3
By Ivanenko L., Filonov A., Shaposhnikov V., Behr G., Souptel D., Schumann J., Vinzelberg H., Plotnikov A., Borisenko V. in (2003)
Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp.