Microelectronic Engineering,volume 70,issue 2  (11-2004)

Period of time: 2004年2期

Publisher: Elsevier

Founded in: 1983

Total resources: 4

ISSN: 0167-9317

Subject: TN Radio Electronics, Telecommunications Technology

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Microelectronic Engineering,volume 70,issue 2

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Preface

By Thomas O., Dallaporta H., Gas P. in (2003)

Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp. 137-138

Elsevier

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Ni- and Co-based silicides for advanced CMOS applications

By Kittl J.A., Lauwers A., Chamirian O., Van Dal M., Akheyar A., De Potter M., Lindsay R., Maex K. in (2003)

Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp. 158-165

Elsevier

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First stages of silicidation in Ti/Si thin films

By Chenevier B., Chaix-Pluchery O., Gergaud P., Thomas O., Madar R., La Via F. in (2003)

Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp. 166-173

Elsevier

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Thickness scaling issues of Ni silicide

By Chamirian O., Kittl J.A., Lauwers A., Richard O., van Dal M., Maex K. in (2003)

Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp. 201-208

Elsevier

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Transport properties of Mn-doped Ru 2 Si 3

By Ivanenko L., Filonov A., Shaposhnikov V., Behr G., Souptel D., Schumann J., Vinzelberg H., Plotnikov A., Borisenko V. in (2003)

Microelectronic Engineering,volume 70,issue 2 , Vol. 70, Iss. 2, 2003-11 , pp. 209-214

Elsevier

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