Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer

By Xiang-Jing Zhuo   Jun Zhang   Dan-Wei Li   Han-Xiang Yi   Zhi-Wei Ren   Jin-Hui Tong   Xing-Fu Wang   Xin Chen   Bi-Jun Zhao   Wei-Li Wang   Shu-Ti Li  

Chinese Physics B, Vol. 23, Iss. 6, 2014-06 ,pp. : 68502-68506

IOP Publishing

Access to resources Recommend Favorite

Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

By Jun Chen   Guang-Han Fan   Yun-Yan Zhang  

Chinese Physics B, Vol. 22, Iss. 1, 2013-01 ,pp. : 18504-18507

IOP Publishing

Access to resources Recommend Favorite

Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

By Jian-Yong Xiong   Yi-Qin Xu   Fang Zhao   Jing-Jing Song   Bin-Bin Ding   Shu-Wen Zheng   Tao Zhang   Guang-Han Fan  

Chinese Physics B, Vol. 22, Iss. 10, 2013-10 ,pp. : 108505-108509

IOP Publishing

Access to resources Recommend Favorite

Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer

By  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 4, 2015-02 ,pp. : 45101-45107

IOP Publishing

Access to resources Recommend Favorite

A dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells

By Qi-Rong Yan   Qi-Ang Yan   Pei-Pei Shi   Qiao-Li Niu   Shu-Ti Li   Yong Zhang  

Chinese Physics B, Vol. 22, Iss. 2, 2013-02 ,pp. : 26102-26105

IOP Publishing

Access to resources Recommend Favorite