Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates

Author： Taylor E. Fang F. Oehler F. Edwards P.R. Kappers M.J. Lorenz K. Alves E. McAleese C. Humphreys C.J. Martin R.W.

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.28, Iss.6, 2013-06, pp. : 65011-65017

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