Optimization of process conditions for the formation of hemispherical-grained (HSG) silicon in high-density DRAM capacitor

Author： Joung Y.H. Kang H.S. Kang S.J.

Publisher： Elsevier

ISSN： 1369-8001

Source： Materials Science in Semiconductor Processing, Vol.5, Iss.6, 2002-12, pp. : 497-503

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