Effect of High-Density Plasma Process Parameters on Carrier Transport Properties in p -to- n Type Converted Hg 0.7 Cd 0.3 Te Layer

Author： Park B.A.   Musca C.A.   Antoszewski J.   Dell J.M.   Faraone L.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.36, Iss.8, 2007-08, pp. : 913-918

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