Reduction of Leakage Current by HfO2 High K Dielectric Film Stacked on the Ferroelectric Layer of a MFIS Structure

By Nishikawa T.   Otsuka T.   Morita K.  

Integrated Ferroelectrics, Vol. 48, Iss. 1, 2002-01 ,pp. : 41-50

Taylor & Francis Ltd

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Leakage Current Measurements of STO and BST Thin Films Interpreted by the "Dead" Layer Model

By Schmitz Sam   Schroeder Herbert  

Integrated Ferroelectrics, Vol. 46, Iss. 1, 2002-01 ,pp. : 233-242

Taylor & Francis Ltd

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Organic Photosensor in Elgraphy (II): Photoinduced Current Amplifying Layer

By Aoki D.   Kashiwabara M.   Okabe M.   Hikosaka S.   Inoue E.  

Journal of Imaging Science and Technology, Vol. 44, Iss. 3, 2000-05 ,pp. : 179-187

Society for Imaging Science and Technology

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Effect of Pre-annealing to Blocking Oxide on the Performance of Dual Trapping-layer Engineered Charge Trapping Memory

By Chen Guoxing   Huo Zongliang   Han Yulong   Li Xinkai   Zhang Dong   Liu Su   Liu Ming  

Integrated Ferroelectrics, Vol. 151, Iss. 1, 2014-02 ,pp. : 56-60

Taylor & Francis Ltd

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The Effect of Leakage Current on the Retention Property of YMnO3 Based MFIS Capacitor

By Ito Daisuke   Fujimura Norifumi   Ito Taichiro  

Integrated Ferroelectrics, Vol. 49, Iss. 1, 2002-01 ,pp. : 41-49

Taylor & Francis Ltd

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