Author： Xue Wu Wu Lu Yiyuan Wang Jialing Xu Leqing Zhang Jian Lu Xin Yu Xingyao Zhang Tianle Hu
Publisher： IOP Publishing
ISSN： 1674-4926
Source： Journal of Semiconductors, Vol.34, Iss.1, 2013-01, pp. : 15006-15011
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Abstract
The total dose effect of an AD678 with a BiMOS process is studied. We investigate the performance degradation of the device in different bias states and at several dose rates. The results show that an AD678 can endure 3 krad(Si) at low dose rate and 5 krad(Si) at a high dose rate for static bias. The sensitive parameters to the bias states also differ distinctly. We find that the degradation is more serious on static bias. The underlying mechanisms are discussed in detail.
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