The STI stress effect on deep submicron PDSOI MOSFETs

By Jianhui Bu   Shuzhen Li   Jiajun Luo   Zhengsheng Han  

Journal of Semiconductors, Vol. 35, Iss. 3, 2014-03 ,pp. : 34008-34010

IOP Publishing

Access to resources Recommend Favorite

Performance analysis of tapered gate in PD/SOI CMOS technology

By Hwang W.   Chuang C. T.   Curran B. W.   Rosenfield M. G.  

International Journal of Electronics, Vol. 89, Iss. 4, 2002-04 ,pp. : 267-275

Taylor & Francis Ltd

Access to resources Recommend Favorite

Design and development of a novel high-transconductance pH-ISFET (ion-sensitive field-effect transistor)-based glucose biosensor

By Khanna V. K.   Kumar A.   Jain Y. K.   Ahmad S.  

International Journal of Electronics, Vol. 93, Iss. 2, 2006-02 ,pp. : 81-96

Taylor & Francis Ltd

Access to resources Recommend Favorite

Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs

By Tan Fei   Xue Shoubin   Huang Liangxi   Wu Weikang   Zhang Xing   An Xia   Huang Ru  

Semiconductor Science and Technology, Vol. 28, Iss. 5, 2013-05 ,pp. : 55003-55007

IOP Publishing

Access to resources Recommend Favorite

Analytical modeling of thermal noise in deep submicron MOSFETs

By Lu Zhi-Qiang  

Analog Integrated Circuits and Signal Processing, Vol. 59, Iss. 2, 2009-05 ,pp. : 185-189

Springer Publishing Company

Access to resources Recommend Favorite