Atomistic models of dislocation formation at crystal surface ledges in Si1-xGex/Si(100) heteroepitaxial thin films

By Gao H.   Ozkan C. S.   Nix W. D.   Zimmerman J. A.   Freund L. B.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 79, Iss. 2, 1999-02 ,pp. : 349-370

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Climb/glide dislocation sources at low-misfit Ge x Si 1-x -Si(001) interfaces

By Jiao S.   Hirsch P. B.   Perovic D. D.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 81, Iss. 5, 2001-05 ,pp. : 1041-1064

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In situ transmission electron microscope observations of misfit strain relaxation and coalescence stages of Si 1-x Ge x on Si(001)

By Hiroyama Y.   Tamura M.  

Thin Solid Films, Vol. 334, Iss. 1, 1998-12 ,pp. : 1-5

Elsevier

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The interdependency of morphology, strain and composition in buried GeSi/Si(001) quantum dots

By Lang Christian  

Philosophical Magazine, Vol. 90, Iss. 35-36, 2010-12 ,pp. : 4703-4709

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In-situ transmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si(001) heterostructures

By Stach E. A.   Hull R.   Tromp R. M.   Ross F. M.   Reuter M. C.   Bean J. C.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 80, Iss. 9, 2000-09 ,pp. : 2159-2200

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