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A transmission electron microscopy study of composition in Si1-xGex/Si (001) quantum dots

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Residual strain and surface roughness of Si 1-x Ge x alloy layers grown by molecular beam epitaxy on Si(001) substrate

By Tatsuyama C.   Asano T.   Nakao T.   Matada H.   Tambo T.   Ueba H.  

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In-situ transmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si(001) heterostructures

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