Laser crystallised poly-Si TFTs for AMLCDs

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Excimer laser annealed poly-Si thin film transistor with self-aligned lightly doped drain structure

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Microcrystalline structure of poly-Si films prepared by cathode-type r.f. glow discharge

By Jayatissa A.H.   Nakanishi Y.   Hatanaka Y.   Suzuki M.  

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A simple low-temperature laser-doping employing phosphosilicate glass and borosilicate glass films for the source and drain formation in poly-Si thin film transistors

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Transformation of amorphous Si 0.9 Ge 0.1 and Si films by laser annealing

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