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Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 561-563

Elsevier

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Influences of crystallographic misorientation of GaAs substrateson misfit stresses and microhardness of InGaP epilayers

By Lee J.  

Thin Solid Films, Vol. 320, Iss. 2, 1998-05 ,pp. : 173-178

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Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells

By Rudamas C.   Martnez-Pastor J.   Gonzalez L.   Vinattieri A.   Colocci M.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 206-208

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A new InGaP/GaAs double delta-doped heterojunction bipolar transistor (D 3 HBT)

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Thin Solid Films, Vol. 345, Iss. 2, 1999-05 ,pp. : 270-272

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InGaP/GaAs heterojunction bipolar transistor optical and electronic band structure characterization

By Murtagh M.   Beechinor J.T.   Cordero N.   Kelly P.V.   Crean G.M.   Farrell I.L.   O'Connor G.M.   Bland S.W.  

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