Structure effect on electrical properties of ITO films prepared by RF reactive magnetron sputtering

Author： Meng L.-J.   Dos Santos M.P.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.289, Iss.1, 1996-11, pp. : 65-69

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Properties of indium tin oxide (ITO) films prepared by r.f. reactive magnetron sputtering at different pressures

By Meng L.-J.   Dos Santos M.P.  

Thin Solid Films, Vol. 303, Iss. 1, 1997-07 ,pp. : 151-155

Elsevier

Access to resources Recommend Favorite

Structural, electrical and optical properties of zinc nitride thin films prepared by reactive rf magnetron sputtering

By Futsuhara M.   Yoshioka K.   Takai O.  

Thin Solid Films, Vol. 322, Iss. 1, 1998-06 ,pp. : 274-281

Elsevier

Access to resources Recommend Favorite

Influence of the process parameters on structural and electrical properties of r.f. magnetron sputtering ITO films

By Baa I.   Fernandes B.   Nunes P.   Quintela M.   Martins R.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 244-247

Elsevier

Access to resources Recommend Favorite

Properties of indium tin oxide films prepared by rf reactive magnetron sputtering at different substrate temperature

By Meng L.-j.   dos Santos M.P.  

Thin Solid Films, Vol. 322, Iss. 1, 1998-06 ,pp. : 56-62

Elsevier

Access to resources Recommend Favorite

Properties of amorphous SiO 2 films prepared by reactive RF magnetron sputtering method

By He L.-N.   Xu J.  

Vacuum, Vol. 68, Iss. 2, 2002-10 ,pp. : 197-202

Elsevier

Access to resources Recommend Favorite