Defect distribution and morphology development of SiGe layers grown on Si(100) substrates by LPE

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Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 116-119

Elsevier

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Influence of cooling rate on the dislocations and related luminescence in LPE SiGe layers grown on Si (100) substrates

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Growth of Ge on H-terminated Si(111) surface

By Ishii K.   Kuriyama H.   Ezoe K.   Yamamoto T.   Ikeda M.   Matsumoto S.  

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Selective growth of SiGe quantum dots on hydrogen-passivated Si(100) surfaces

By Thanh V.L.   Ngo T.T.T.   Bui H.   Bouchier D.   Le T.T.T.   Phan K.H.  

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Ion assisted MBE growth of SiGe nanostructures

By Bauer M.   Oehme M.   Lyutovich K.   Kasper E.  

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