Surface processes and phase diagrams in MBE growth of Si/Ge heterostuctures

By Pchelyakov O.P.   Markov V.A.   Nikiforov A.I.   Sokolov L.V.  

Thin Solid Films, Vol. 306, Iss. 2, 1997-09 ,pp. : 299-306

Elsevier

Access to resources Recommend Favorite

Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

By Koulmann J.J.   Chelly R.   Angot T.   Louis P.   Bolmont D.   Werckmann J.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 84-87

Elsevier

Access to resources Recommend Favorite

MBE grown Ge dots on Si/SiGe ion implanted buffers

By Gaiduk P.I.   Nylandsted Larsen A.   Lundsgaard Hansen J.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 510-512

Elsevier

Access to resources Recommend Favorite

Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate

By Tang Y.S.   Cai S.J.   Jin G.L.   Wang K.L.   Soyez H.M.   Dunn B.S.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 76-80

Elsevier

Access to resources Recommend Favorite

Growth of single-crystal Si, Ge and SiGe layers using plasma-assisted CVD

By Reehal H.S.   Thwaites M.J.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 76-79

Elsevier

Access to resources Recommend Favorite