Influence of cooling rate on the dislocations and related luminescence in LPE SiGe layers grown on Si (100) substrates

By Sembian A.M.   Banhart F.   Konuma M.   Weber J.   Moorthy Babu S.   Ramasamy P.  

Thin Solid Films, Vol. 372, Iss. 1, 2000-09 ,pp. : 1-5

Elsevier

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Relaxed Si 0.7 Ge 0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs

By Wohl G.   Dudek V.   Graf M.   Kibbel H.   Herzog H.-J.   Klose M.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 175-181

Elsevier

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Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy

By Muller E.   Hartmann R.   David C.   Grutzmacher D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 92-95

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The effect of post-growth cooling rate on the defect structure in MBE-grown buried layers of Si 1-x Ge x on Si substrates

By Fatemi M.   Thompson P.E.   Twigg M.E.   Chaudhuri J.  

Thin Solid Films, Vol. 312, Iss. 1, 1998-01 ,pp. : 362-371

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Growth mechanisms of SiGe on (111) and (100) Si substrates

By Gallas B.   Berbezier I.   Ronda A.   Derrien J.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 22-26

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