Light emitting SiGe/i-Si/Si:Er:O tunneling diodes prepared by molecular beam epitaxy

By Ni W.-X.   Du C.-X.   Duteil F.   Pozina G.   Hansson G.V.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 414-418

Elsevier

Access to resources Recommend Favorite

Molecular beam epitaxy of Ru 2 Si 3 on silicon

By Lenssen D.   Lenk S.   Bay H.L.   Mantl S.  

Thin Solid Films, Vol. 371, Iss. 1, 2000-08 ,pp. : 66-71

Elsevier

Access to resources Recommend Favorite

Effects of atomic hydrogen on growth behavior of Si films by Si 2 H 6 -source molecular beam epitaxy

By Yasuda Y.   Matsuyama T.   Sato K.   Kondo M.   Ikeda H.   Zaima S.  

Thin Solid Films, Vol. 317, Iss. 1, 1998-04 ,pp. : 48-51

Elsevier

Access to resources Recommend Favorite

Formation of -FeSi 2 precipitates at the SiO 2 /Si interface by Fe + ion implantation and their structural and optical properties

By Oyoshi K.   Lenssen D.   Carius R.   Mantl S.  

Thin Solid Films, Vol. 381, Iss. 2, 2001-01 ,pp. : 202-208

Elsevier

Access to resources Recommend Favorite

Luminescence from erbium- and oxygen-doped SiGe grown by molecular beam epitaxy

By Neufeld E.   Sticht A.   Brunner K.   Abstreiter G.   Bay H.   Buchal C.   Holzbrecher H.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 219-222

Elsevier

Access to resources Recommend Favorite