Cold-walled UHV/CVD batch reactor for the growth of Si 1-x Ge x layers

By Thomsen E.V.   Christensen C.   Andersen C.R.   Pedersen E.V.   Egginton P.N.   Hansen O.   Petersen J.W.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 72-75

Elsevier

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X-Ray scattering investigation of the interfaces in Si/Si 1-x Ge x superlattices on Si(001) grown by MBE and UHV-CVD

By Baribeau J.-M.   Lafontaine H.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 141-147

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Photoluminescence in UHV-CVD-grown Si 1-x Ge x quantum wells on Si(100): band alignment variation with excitation density and applied uniaxial stress

By Rowell N.L.   Aers G.C.   Lafontaine H.   Williams R.L.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 158-162

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Heteroepitaxial Si 1-x-y Ge x C y films on (100)Si substrates for future low-power applications

By Alford T.L.   Bair A.E.   Atzmon Z.   Stout L.M.   Balster S.G.   Schroder D.K.   Roedel R.J.  

Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. : 632-636

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Strained Si 1-x Ge x graded channel PMOSFET grown by UHVCVD

By Su C.Y.   Wu S.L.   Jinn Chang S.   Chen L.P.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 371-374

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