UHV-CVD heteroepitaxial growth of Si 1-x Ge x alloys on Si(100) using silane and germane

By Thanh Vinh L.   Aubry-Fortuna V.   Bouchier D.   Guedj C.   Zheng Y.   Hincelin G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 59-63

Elsevier

Access to resources Recommend Favorite

X-Ray scattering investigation of the interfaces in Si/Si 1-x Ge x superlattices on Si(001) grown by MBE and UHV-CVD

By Baribeau J.-M.   Lafontaine H.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 141-147

Elsevier

Access to resources Recommend Favorite

The growth kinetics of Si 1-x Ge x layers from SiH 4 and GeH 4

By Potapov A.V.   Orlov L.K.   Ivin S.V.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 191-195

Elsevier

Access to resources Recommend Favorite

Strained Si 1-x Ge x graded channel PMOSFET grown by UHVCVD

By Su C.Y.   Wu S.L.   Jinn Chang S.   Chen L.P.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 371-374

Elsevier

Access to resources Recommend Favorite

Photoluminescence in UHV-CVD-grown Si 1-x Ge x quantum wells on Si(100): band alignment variation with excitation density and applied uniaxial stress

By Rowell N.L.   Aers G.C.   Lafontaine H.   Williams R.L.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 158-162

Elsevier

Access to resources Recommend Favorite