UHV-CVD heteroepitaxial growth of Si 1-x Ge x alloys on Si(100) using silane and germane

By Thanh Vinh L.   Aubry-Fortuna V.   Bouchier D.   Guedj C.   Zheng Y.   Hincelin G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 59-63

Elsevier

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Cold-walled UHV/CVD batch reactor for the growth of Si 1-x Ge x layers

By Thomsen E.V.   Christensen C.   Andersen C.R.   Pedersen E.V.   Egginton P.N.   Hansen O.   Petersen J.W.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 72-75

Elsevier

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Relaxed epitaxial Si 1-x Ge x grown by MBE

By Monakhov E.V.   Shiryaev S.Y.   Nylandsted Larsen A.   Hartung J.   Davies G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 43-46

Elsevier

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Growth of strained Si/Si 1-y C y /Si 1-x Ge x structures by MBE

By Joelsson K.B.   Ni W.-X.   Pozina G.   Hultman L.   Hansson G.V.  

Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. : 185-188

Elsevier

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Structural and optical characterisation of undoped Si-Si 0.78 Ge 0.22 /Si(001) superlattices grown by MBE

By Mironov O.A.   Parker E.H.C.   Phillips P.J.   Dowsett M.G.   Barradas N.P.   Jeynes C.   Mironov M.   Gnezdilov V.P.   Ushakov V.   Eremenko V.V.  

Thin Solid Films, Vol. 306, Iss. 2, 1997-09 ,pp. : 307-312

Elsevier

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