0.10 m TiSi 2 technology utilizing nitrogen diffusion controlled RTA

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CoSi 2 and TiSi 2 for Si/SiGe heterodevices

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Morphological stability of TiSi 2 on polycrystalline silicon

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Initial stages of growth during CVD of W on TiSi 2 substrates

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Advanced salicides for 0.10 m CMOS: Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi 2

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