The formation of TiSi 2 by RTA processing

By Wan W.-K.   Wu S.-T.  

Thin Solid Films, Vol. 298, Iss. 1, 1997-04 ,pp. : 62-65

Elsevier

Access to resources Recommend Favorite

Advanced salicides for 0.10 m CMOS: Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi 2

By Kittl J.A.   Hong Q.Z.   Yang H.   Yu N.   Samavedam S.B.   Gribelyuk M.A.  

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 404-411

Elsevier

Access to resources Recommend Favorite

CoSi 2 and TiSi 2 for Si/SiGe heterodevices

By Gluck M.   Schuppen A.   Rosler M.   Heinrich W.   Hersener J.   Konig U.   Yam O.   Eizenberg M.   Cytermann C.  

Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. : 549-554

Elsevier

Access to resources Recommend Favorite

Morphological stability of TiSi 2 on polycrystalline silicon

By Chen J.F.   Chen L.J.  

Thin Solid Films, Vol. 293, Iss. 1, 1997-01 ,pp. : 34-39

Elsevier

Access to resources Recommend Favorite

Initial stages of growth during CVD of W on TiSi 2 substrates

By Engqvist J.   Jansson U.  

Thin Solid Films, Vol. 263, Iss. 1, 1995-07 ,pp. : 54-64

Elsevier

Access to resources Recommend Favorite