Ion assisted MBE growth of SiGe nanostructures

By Bauer M.   Oehme M.   Lyutovich K.   Kasper E.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 104-108

Elsevier

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The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface

By Nikiforov A.I.   Markov V.A.   Cherepanov V.A.   Pchelyakov O.P.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 183-187

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Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate

By Tang Y.S.   Cai S.J.   Jin G.L.   Wang K.L.   Soyez H.M.   Dunn B.S.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 76-80

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Surface segregation of boron atoms in Si and strained Si 1-x Ge x layers during MBE growth: Experiment and simulation

By Osten H.J.   Kruger D.  

Thin Solid Films, Vol. 258, Iss. 1, 1995-03 ,pp. : 137-142

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Alternatives to thick MBE-grown relaxed SiGe buffers

By Hackbarth T.   Herzog H.-J.   Zeuner M.   Hock G.   Fitzgerald E.A.   Bulsara M.   Rosenblad C.   von Kanel H.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 148-151

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