Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices

By Whall T.E.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 160-165

Elsevier

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Si/Si 1-x Ge x and Si/Si 1-y C y heterostructures: materials for high-speed field-effect transistors

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Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 1-10

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Artificial substrates for n- and p-type SiGe heterostructure field-effect transistors

By Hackbarth T.   Kibbel H.   Glueck M.   Hoeck G.   Herzog H.-J.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 136-140

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Limited number of carriers transferred to the strained-Si channel in the SiGe/Si/SiGe modulation-doped field-effect transistor

By Sugii N.   Nakagawa K.   Yamaguchi S.   Park S.K.   Miyao M.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 362-365

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Characterisation of an n-type Si/SiGe modulation doped field-effect transistor

By Kuznetsov V.I.   Werner K.   Radelaar S.   Metselaar J.W.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 263-266

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