Growth and characterisation of pseudomorphic Si/SiGe/Si heterostructures for p-channel field-effect transistors

By Whall T.E.   Parker E.H.C.  

Thin Solid Films, Vol. 306, Iss. 2, 1997-09 ,pp. : 338-345

Elsevier

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Lateral photodetector devices on Si/SiGe heterostructures

By Engel C.   Baumgartner P.   Holzmann M.   Nutzel J.F.   Abstreiter G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 347-350

Elsevier

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Si/Si 1-x Ge x and Si/Si 1-y C y heterostructures: materials for high-speed field-effect transistors

By Schaffler F.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 1-10

Elsevier

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Limited number of carriers transferred to the strained-Si channel in the SiGe/Si/SiGe modulation-doped field-effect transistor

By Sugii N.   Nakagawa K.   Yamaguchi S.   Park S.K.   Miyao M.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 362-365

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Effect of strain on light emission from pseudomorphic Si/Si 1-x Ge x /Si structures

By Kimura Y.   Nakagawa K.   Miyao M.  

Thin Solid Films, Vol. 306, Iss. 1, 1997-08 ,pp. : 130-132

Elsevier

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